首頁>NE699M01-T1>規(guī)格書詳情
NE699M01-T1中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
NE699M01-T1 |
| 功能描述 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
| 文件大小 |
50.36 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | Renesas Electronics America |
| 企業(yè)簡稱 |
NEC【瑞薩】 |
| 中文名稱 | 日本瑞薩電子株式會社官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-8-2 22:50:00 |
| 人工找貨 | NE699M01-T1價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
NE699M01-T1規(guī)格書詳情
DESCRIPTION
The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.
FEATURES
? HIGH fT:
16 GHz TYP at 2 V, 20 mA
? LOW NOISE FIGURE:
NF = 1.1 dB TYP at 2 GHz
? HIGH GAIN:
|S21E|2 = 14 dB TYP at f = 2 GHz
? 6 PIN SMALL MINI MOLD PACKAGE
? EXCELLENT LOW VOLTAGE,
LOW CURRENT PERFORMANCE
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA |
12000 |
全新原裝假一賠十 |
詢價(jià) | ||
NEC |
91+ |
N/A |
2445 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
NEC |
NA |
10 |
詢價(jià) | ||||
NEC |
23+ |
NA |
624 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
NE71108D |
160 |
160 |
詢價(jià) | ||||
NEC |
2450+ |
N/A |
8850 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
NEC |
2023+ |
702 |
詢價(jià) | ||||
NEC |
17+ |
SOT-363 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
NEC |
24+ |
SOT-363 |
3993 |
詢價(jià) | |||
NEC |
16+ |
SOT-363 |
10000 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) |
