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NDB6020P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheselogiclevelP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

NDB6020P

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-24A@TC=25℃ ·DrainSourceVoltage-VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDB6020P

P 溝道，邏輯電平增強型場效應晶體管，-20V，-24A，50mΩ; -24 A, -20 VrDS(ON) = 50 mΩ @ VGS = -4.5 VrDS(ON) = 70 mΩ @ VGS = -2.7 VrDS(ON) = 75 mΩ @ VGS = -2.5 V\nCritical DC Electrical Parameters Specified at Elevated Temperature\nRuggedInternal Source-Drain Diode Can Eliminate The Need For An External Zener Diode Transient Suppressor\n175°C Maximum Junction Temperature Rating\nHigh Density Cell Design for Extremely Low rDS(ON)\nTO-220 and TO-263 (D2PAK) Package For Both Through Hole And Surface Mount Applications\n;

這些邏輯電平P溝道增強模式功率場效應晶體管采用飛兆專有的高密度DMOS技術生產(chǎn)。 這種密度非常高的工藝是專為最大限度地降低通態(tài)電阻，提供卓越的開關性能，以及在雪崩和交換模式下承受高能量脈沖而定制的。 這些器件特別適合需要快速開關、低線路內(nèi)功率損耗以及抗瞬變能力的汽車、DC/DC轉(zhuǎn)換器、PWM電機控制和其他電池供電電路等低電壓應用。

NDP6020

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingNationalsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingper

NDP6020

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDP6020P

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?LoadSwitch ?NotebookAdaptorSwitch

NDP6020P

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

NDP6020P

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-24A@TC=25℃ ·DrainSourceVoltage-VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NI6020E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NR-6020

PleasereadthisnoticebeforeusingtheTAIYOYUDENproducts

PleasereadthisnoticebeforeusingtheTAIYOYUDENproducts. SMDPOWERINDUCTORS(NRSERIES/NRSERIESHTYPE/STYPE/VTYPE)