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NCP5104

Single Input High and Low Side Power MOSFET Driver; ? High Voltage range: up to 600 V\n? Rugged and flexible design\n? dV/dt Immunity 50 V/nsec\n? Robust design\n? Gate drive supply range from 10 V to 20 V\n? Wide supply range\n? High and Low drive outputs\n? Suitable for half bridge converter topology\n? Output source / sink current capability: 250 mA / 500 mA\n? Suitable for low to mid power applications\n? 3.3 V and 5 V input logic compatible\n? Low level input for micro-controller operation\n? Up to Vcc swing on input pins\n? Flexible input level up to Vcc\n? Under Vcc LockOut (UVLO) for both channels\n? Robust design\n? Pin to pin compatible with Industry standard\n? Reduced design efforts\n? Matched propagation delays between both channels\n? 1 input with internal fixed dead time (520 ns)\n;

The NCP5104 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.It uses the bootstrap technique to insure a proper drive of the High-side power switch.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104_15

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104BA36WGEVB

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104DR2G

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104DR2G

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104DR2G

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104PG

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCP5104PG

High Voltage, Half Bridge Driver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Power Switch：

    MOSFET/IGBT

  • Number of Outputs：

    2

  • Topology：

    Half-Bridge

  • Isolation Type：

    Junction Isolation

  • Vin Max (V)：

    600

  • VCC Max (V)：

    20

  • Drive Source/Sink Typ (mA)：

    250/500

  • Rise Time (ns)：

    85

  • Fall Time (ns)：

    35

  • tp Max (ns)：

    170

  • Package Type：

    SOIC-8

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更多NCP5104供應(yīng)商 更新時間2025-7-27 11:10:00

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