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NCEAP40T11AG

NCEAutomotiveN-ChannelSuperTrenchPowerMOSFET

Description TheNCEAP40T11AGusesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhig

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP40T11AK

NCEAutomotiveN-ChannelSuperTrenchPowerMOSFET

Description TheNCEAP40T11AKusesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpowerlosses areminimizedduetoanextremelylowcombinationofRDS(ON)and Qg.Thisdeviceisidealforhig

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP40T11G

NCEAutomotiveN-ChannelSuperTrenchPowerMOSFET

Description TheNCEAP40T11GusesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpowerlosses areminimizedduetoanextremelylowcombinationofRDS(ON)and Qg.Thisdeviceisidealforhigh

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP40T11K

NCEAutomotiveN-ChannelSuperTrenchPowerMOSFET

Description TheNCEAP40T11KusesSuperTrenchtechnologythatisuniquely optimizedtoprovidethemostefficienthighfrequencyswitching performance.Bothconductionandswitchingpowerlossesare minimizedduetoanextremelylowcombinationofRDS(ON)andQg.This deviceisidealforhigh

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEP40T11

NCEN-ChannelSuperTrenchPowerMOSFET

Description TheNCEP40T11usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthigh frequencyswitchingperformance.Bothconductionand switchingpowerlossesareminimizedduetoanextremely lowcombinationofRDS(ON)andQg.Thisdeviceisidealfor high-

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEP40T11AK

NCEN-ChannelSuperTrenchPowerMOSFET

Description TheNCEP40T11AKusesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthigh frequencyswitchingperformance.Bothconductionand switchingpowerlossesareminimizedduetoanextremely lowcombinationofRDS(ON)andQg.Thisdeviceisidealfor hig

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

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