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NCE30H11G

12-200V N-Channel Trench MOSFET; ? V DS =30V,I D =110AR DS(ON) <2.4 m? @ V GS =10VR DS(ON) <3.0m? @ V GS =4.5V? High density cell design for ultra low Rdson? Fully characterized avalanche voltage and current? Good stability and uniformity with high E AS? Excellent package for good heat dissipation? Special process technology for high ESD capability;

The NCE30H11G uses advanced trench technology and design to provide excellent R DS(ON) ?with low gate charge. It can be used in a wide variety of applications.

NCE30H11G

絲?。?strong>NCE30H11G；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

NCE30H11BG

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE30H11BGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.3mΩ(typical)@VGS=10V RDS(ON)=3.8mΩ(typical)@VGS=4.5V ●Excellentga

NCE30H11BK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE30H11BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.7mΩ(typical)@VGS=10V RDS(ON)=3.9mΩ(typical)@VGS=4.5V ●Highdensi

NCE30H11K

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE30H11Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)