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首頁(yè)>NCD57200_V01>規(guī)格書(shū)詳情

NCD57200_V01中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NCD57200_V01
廠(chǎng)商型號(hào)

NCD57200_V01

功能描述

Half Bridge Gate Driver (Isolated High & Non- Isolated Low)

文件大小

1.58817 Mbytes

頁(yè)面數(shù)量

18 頁(yè)

生產(chǎn)廠(chǎng)商 ON Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

ONSEMI安森美半導(dǎo)體

中文名稱(chēng)

安森美半導(dǎo)體公司官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-8-5 8:40:00

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NCD57200_V01規(guī)格書(shū)詳情

The NCD57200 is a high voltage gate driver with one non- isolated

low side gate driver and one galvanically isolated high or low side gate

driver. It can directly drive two IGBTs in a half bridge configuration.

Isolated high side driver can be powered with an isolated power supply

or with Bootstrap technique from the low side power supply.

The galvanic isolation for the high side gate driver guarantees

reliable switching in high power applications for IGBTs that operate

up to 800 V, at high dv/dt. The optimized output stages provide a mean

of reducing IGBT losses. Its features include two independent inputs

with deadtime and interlock, accurate asymmetric UVLOs, and short

and matched propagation delays. The NCD57200 operates with its

VDD/VBS up to 20 V.

特性 Features

? High Peak Output Current (+1.9 A/- 2.3 A)

? Low Output Voltage Drop for Enhanced IGBT Conduction

? Floating Channel for Bootstrap Operation up to +800 V

? CMTI up to 100 kV/ms

? Reliable Operation for VS Negative Swing to - 800 V

? VDD & VBS Supply Range up to 20 V

? 3.3 V, 5 V, and 15 V Logic Input

? Asymmetric Under Voltage Lockout Thresholds for High Side and

Low Side

? Matched Propagation Delay 90 ns

? Built- in 20 ns Minimum Pulse Width Filter (or Input Noise Filter)

? Built- in 340 ns Dead- Time and High and Low Inputs Interlock

? Non- Inverting Output Signal

? This Device is Pb- Free, Halogen Free/BFR Free and is RoHS

Compliant

Typical Applications

? Fans, Pumps

? Home Appliances

? Consumer Electronics

? General Purpose Half Bridge Applications

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