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NAND512W3A2CN6E集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

廠商型號(hào) |
NAND512W3A2CN6E |
參數(shù)屬性 | NAND512W3A2CN6E 封裝/外殼為48-TFSOP(0.724",18.40mm 寬);包裝為管件;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 512MBIT PARALLEL 48TSOP |
功能描述 | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
封裝外殼 | 48-TFSOP(0.724",18.40mm 寬) |
文件大小 |
1.27065 Mbytes |
頁(yè)面數(shù)量 |
51 頁(yè) |
生產(chǎn)廠商 | numonyx |
企業(yè)簡(jiǎn)稱 |
NUMONYX |
中文名稱 | numonyx官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-7-14 18:51:00 |
人工找貨 | NAND512W3A2CN6E價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 μs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK? packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
NAND512W3A2CN6E
- 制造商:
Micron Technology Inc.
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
管件
- 存儲(chǔ)器類型:
非易失
- 存儲(chǔ)器格式:
閃存
- 技術(shù):
閃存 - NAND
- 存儲(chǔ)容量:
512Mb(64M x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁(yè):
50ns
- 電壓 - 供電:
2.7V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
48-TFSOP(0.724",18.40mm 寬)
- 供應(yīng)商器件封裝:
48-TSOP
- 描述:
IC FLASH 512MBIT PARALLEL 48TSOP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
20+ |
TSOP48 |
1208 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ST |
18+ |
TSOP-48 |
25454 |
全新原裝現(xiàn)貨,可出樣品,可開(kāi)增值稅發(fā)票 |
詢價(jià) | ||
ST |
TSOP48 |
3500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
ST |
22+ |
TSOP48 |
9035 |
原裝正品,實(shí)單請(qǐng)聯(lián)系 |
詢價(jià) | ||
ST |
24+ |
TSSOP |
8540 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
ST |
20+ |
TSOP-48 |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢價(jià) | ||
ST |
23+ |
TSOP48 |
6 |
原裝環(huán)保房間現(xiàn)貨假一賠十 |
詢價(jià) | ||
ST/意法 |
25+ |
TSOP48 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST/意法 |
21+ |
TSOP48 |
20000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅發(fā)票 |
詢價(jià) | ||
Lyontek |
23+24 |
BGA |
27960 |
原裝現(xiàn)貨.優(yōu)勢(shì)熱賣.終端BOM表可配單 |
詢價(jià) |