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首頁(yè)>NAND512R3A2CZA6F>規(guī)格書詳情

NAND512R3A2CZA6F中文資料NUMONYX數(shù)據(jù)手冊(cè)PDF規(guī)格書

NAND512R3A2CZA6F
廠商型號(hào)

NAND512R3A2CZA6F

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

1.27065 Mbytes

頁(yè)面數(shù)量

51 頁(yè)

生產(chǎn)廠商 numonyx
企業(yè)簡(jiǎn)稱

NUMONYX

中文名稱

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更新時(shí)間

2025-7-19 16:39:00

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NAND512R3A2CZA6F規(guī)格書詳情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 μs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK? packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

產(chǎn)品屬性

  • 型號(hào):

    NAND512R3A2CZA6F

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
2016+
BGA
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價(jià)
ST/MICRON
23+
BGA
6000
正規(guī)渠道,只有原裝!
詢價(jià)
ST/MICRON
24+
BGA
5000
全新原裝正品,現(xiàn)貨銷售
詢價(jià)
ST/意法
24+
NA/
3280
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
ST/MICRON
23+
BGA
20000
詢價(jià)
ST
21+
VFBGA-6
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
Micron Technology Inc
23+/24+
63-TFBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價(jià)
MICRON/美光
22+
BGA
6000
原裝正品
詢價(jià)
ST/意法
24+
BGA
81
原裝現(xiàn)貨假一賠十
詢價(jià)
ST
16+
TQFP
4000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)