首頁>N64T1630C1BZ>規(guī)格書詳情
N64T1630C1BZ中文資料NANOAMP數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
N64T1630C1BZ |
功能描述 | 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M ? 16 Bits |
文件大小 |
348.47 Kbytes |
頁面數(shù)量 |
18 頁 |
生產(chǎn)廠商 | NanoAmp Solutions, Inc. |
企業(yè)簡稱 |
NANOAMP |
中文名稱 | NanoAmp Solutions, Inc.官網(wǎng) |
原廠標(biāo)識 | NANOAMP |
數(shù)據(jù)手冊 | |
更新時間 | 2025-8-5 23:01:00 |
人工找貨 | N64T1630C1BZ價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
N64T1630C1BZ規(guī)格書詳情
Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
interface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode.
特性 Features
? Dual voltage rails for optimum power & performance
Vcc - 2.7V - 3.3V
Vccq - 2.7V to 3.3V
? Fast Cycle Times
TACC < 70 nS (60ns future)
TPACC < 25 nS
? Very low standby current
ISB < 170μA
? Very low operating current
Icc < 25mA
? PASR (Partial Array Self Refresh)
? TCR (Temperature Compensated Refresh)
產(chǎn)品屬性
- 型號:
N64T1630C1BZ
- 制造商:
NANOAMP
- 制造商全稱:
NANOAMP
- 功能描述:
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 】 16 Bits
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI/德州儀器 |
24+ |
NA/ |
3329 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
WESTCODE |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
PHIL |
24+/25+ |
79 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
RENESAS |
13+ |
TO220F |
990 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
AMPHENOL/安費諾 |
24+ |
10899 |
原廠現(xiàn)貨渠道 |
詢價 | |||
INTERSIL |
23+ |
65480 |
詢價 | ||||
FCS |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
HARRIS |
ROHS |
56520 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
FAIRCHILD |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
新 |
5 |
全新原裝 貨期兩周 |
詢價 |