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MUR6030PTR

Fast Recovery Epi Diodes

Features Highfrequencyoperation Highsurgeforwardcurrentcapability Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongterm reliability Solderdip275℃max.7s,perJESD22-B106

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

MUR6030WT

ULTRAFASTPLASTICRECTIFIER

SMCSangdest Microelectronic (Nanjing) Co., Ltd

燒結(jié)金屬

NCE6030K

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6030Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=30A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NDB6030

N-ChannelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=46A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB6030PL

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030PL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NDP6030

N-ChannelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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T0-247
6893
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500
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16+
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10000
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6
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6430
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16200
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更多MUR6030PTR供應(yīng)商 更新時(shí)間2025-7-21 16:42:00