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首頁(yè)>MTSF1P02HD>規(guī)格書(shū)詳情

MTSF1P02HD中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MTSF1P02HD
廠商型號(hào)

MTSF1P02HD

功能描述

SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM

文件大小

342.6 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商

MOTOROLA

中文名稱

摩托羅拉

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-9-3 14:09:00

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MTSF1P02HD規(guī)格書(shū)詳情

Medium Power Surface Mount Products

TMOS Single P-Channel Field Effect Transistor

Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8? devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

? Miniature Micro8 Surface Mount Package — Saves Board Space

? Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards

? Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

? Logic Level Gate Drive — Can Be Driven by Logic ICs

? Diode Is Characterized for Use In Bridge Circuits

? Diode Exhibits High Speed, With Soft Recovery

? IDSS Specified at Elevated Temperature

? Avalanche Energy Specified

? Mounting Information for Micro8 Package Provided

產(chǎn)品屬性

  • 型號(hào):

    MTSF1P02HD

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM

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