首頁(yè) >MTP50P03HDLG-VB>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=8.4mΩMAX.(VGS=?10V,ID=?25A) ?LowCiss:Ciss=2300pFTYP.(VDS=?25V,VGS=0V) ?Designedforautomotiveapp | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
OptiMOS-PPower-Transistor Feature ?P-Channel ?Enhancementmode ?LogicLevel ?Highcurrentrating ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?-PPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS-PPower-Transistor Features ?P-Channel ?Enhancementmode ?Logiclevel ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Highcurrentrating ?Pb-freelead-plating,RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
P-Channel30V(D-S)MOSFET FEATURES ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
P-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
AutomotiveP-Channel30V(D-S)175?CMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AutomotiveP-Channel30V(D-S)175?CMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
P-channelEnhancedmodeTO-251MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
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