MTP4N80E數(shù)據(jù)手冊(cè)恩XP中文資料規(guī)格書
| 廠商型號(hào) |
MTP4N80E |
| 功能描述 | TMOS E-FET? Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
| 制造商 | 恩XP 恩XP |
| 中文名稱 | N智浦 |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-17 15:01:00 |
| 人工找貨 | MTP4N80E價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTP4N80E規(guī)格書詳情
描述 Description
TMOS E-FET? Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on)= 3.0 OHMThis high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety marginagainst unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
STI |
08+ |
7 |
優(yōu)勢(shì)貨源原裝正品 |
詢價(jià) | |||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
ON/安森美 |
2022+ |
TO220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
ON |
24+ |
136 |
詢價(jià) | ||||
ON |
25+ |
TO220 |
12588 |
原裝正品 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MOT |
06+ |
TO-220 |
3000 |
原裝 |
詢價(jià) | ||
STI |
2023+ |
3000 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | |||
IR |
24+ |
TO 220 |
161253 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) |
