MTP20N20E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
MTP20N20E |
| 功能描述 | TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM |
| 文件大小 |
203.09 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | MOTOROLA |
| 中文名稱 | 摩托羅拉 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-1 19:10:00 |
| 人工找貨 | MTP20N20E價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTP20N20E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161090 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ONS |
127 |
N/A |
80 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ONS |
2016+ |
N/A |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
MOT |
25+23+ |
TO-220 |
16166 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
MOT |
06+ |
TO-220 |
3000 |
原裝 |
詢價(jià) | ||
VBSEMI/微碧半導(dǎo)體 |
24+ |
TO220 |
7800 |
全新原廠原裝正品現(xiàn)貨,低價(jià)出售,實(shí)單可談 |
詢價(jià) | ||
ON/安森美 |
18+ |
TO-220 |
12500 |
全新原裝正品,本司專業(yè)配單,大單小單都配 |
詢價(jià) | ||
ON |
23+ |
TO-220 |
650 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON/ |
24+ |
TO-220 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) |
