MTE53N50E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTE53N50E規(guī)格書詳情
ISOTOP TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? 2500 V RMS Isolated Isotop Package
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? Very Low Internal Parasitic Inductance
? IDSS and VDS(on) Specified at Elevated Temperature
? U. L. Recognized, File #E69369
產(chǎn)品屬性
- 型號：
MTE53N50E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CYSTECH |
14+ |
SOT-263 |
800 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
24+ |
MODULE |
2100 |
公司大量全新現(xiàn)貨 隨時可以發(fā)貨 |
詢價 | |||
MOTOROLA |
24+ |
模塊 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
ON |
22+ |
SOT227 |
3000 |
原裝正品,支持實單 |
詢價 | ||
CYSTECH/全宇昕 |
2511 |
TO-252 |
360000 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 | ||
ON |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
24+ |
1000 |
詢價 | |||||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
國產(chǎn) |
詢價 | ||
MOT |
23+ |
螺絲型模塊 |
20000 |
全新原裝假一賠十 |
詢價 | ||
24+ |
N/A |
76000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
