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MTE125N20E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTE125N20E規(guī)格書詳情
ISOTOP TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? 2500 V RMS Isolated Isotop Package
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? Very Low Internal Parasitic Inductance
? IDSS and VDS(on) Specified at Elevated Temperature
? U.L. Recognized, File #E69369
產(chǎn)品屬性
- 型號：
MTE125N20E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
19+ |
MODULE |
1290 |
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126 |
詢價 | ||
MOTOROLA |
23+ |
NA |
136 |
專做原裝正品,假一罰百! |
詢價 | ||
ON |
22+ |
SOT227 |
3000 |
原裝正品,支持實單 |
詢價 | ||
ON |
24+ |
SOT227 |
2050 |
公司大量全新原裝 正品 隨時可以發(fā)貨 |
詢價 | ||
CYSTECH/全宇昕 |
23+ |
TO-220 |
15238 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ON |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
ON |
24+ |
30000 |
詢價 | ||||
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
MOTOROLA/摩托羅拉 |
2447 |
NA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原裝正品現(xiàn)貨支持實單 |
詢價 |
