MTD9N10E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTD9N10E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Replaces MTD6N10
產(chǎn)品屬性
- 型號：
MTD9N10E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) DPAK Rail
- 功能描述：
MOSFET N D-PAK
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-252-2 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
2022+ |
TO-251 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
ON |
2025+ |
TO-252-2 |
5425 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ONSEMI/安森美 |
22+ |
TO-252 |
25800 |
原裝正品支持實單 |
詢價 | ||
ON |
24+ |
TO-251 |
35200 |
一級代理/放心采購 |
詢價 | ||
進口品牌 |
23+ |
SMD |
15238 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ON |
NA |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ON |
23+ |
TO-251 |
3000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON/安森美 |
24+ |
TO-251 |
3000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
ON |
05+ |
原廠原裝 |
7551 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 |
