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MTD20N06HD規(guī)格書詳情
HDTMOS E-FET? Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applicationsin power supplies, converters and PWM motor controls,these devices are particularlywell suited for bridge circuits wherediode speed and commutating safe operating areas are criticaland offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
產(chǎn)品屬性
- 型號：
MTD20N06HD
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail
- 功能描述：
MOSFET N D-PAK
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
ON |
24+ |
TO252 |
12800 |
原裝正品現(xiàn)貨支持實單 |
詢價 | ||
ON |
24+ |
TO-252 |
90000 |
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
ON |
24+ |
TO252 |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 | ||
ON |
2021+ |
TO252 |
7600 |
原裝現(xiàn)貨，歡迎詢價 |
詢價 | ||
ON |
22+ |
TO252 |
9000 |
只有原裝,原裝,假一罰十 |
詢價 | ||
ON/安森美 |
23+ |
TO-252 |
5200 |
原廠原裝 |
詢價 | ||
ON/安森美 |
22+ |
TO-252 |
17800 |
原裝正品 |
詢價 | ||
ON |
20+ |
TO-252 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
2511 |
TO252 |
12800 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 |
