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首頁(yè)>MTD1N60E>規(guī)格書(shū)詳情

MTD1N60E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MTD1N60E
廠商型號(hào)

MTD1N60E

功能描述

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

文件大小

266.59 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商

MOTOROLA

中文名稱(chēng)

摩托羅拉

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-7 18:12:00

人工找貨

MTD1N60E價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

MTD1N60E規(guī)格書(shū)詳情

TMOS E-FET? Power Field Effect Transistor

DPAK for Surface Mount

N-Channel Enhancement-Mode Silicon Gate

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

產(chǎn)品屬性

  • 型號(hào):

    MTD1N60E

  • 制造商:

    MOTOROLA

  • 制造商全稱(chēng):

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

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