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MTB30P06

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB30P06

TMOS V? Power Field Effect Transistor D2PAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHMTMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET d;

恩XP

恩智浦

恩XP

MTB30P06V

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and comm; ? Avalanche Energy Specified\n? IDSS and VDS(on) Specified at Elevated Temperature\n? Pb-Free Packages are Available;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06V

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB30P06V

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06V_V01

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06VG

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06J3

P-Channel Logic Level Enhancement Mode Power MOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB30P06KFP

P-Channel Enhancement Mode Power MOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTB30P06

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 30 AMPERES 60 VOLTS

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更多MTB30P06供應(yīng)商 更新時(shí)間2025-7-31 15:30:00

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