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Package：54-TSOP（0.400"，10.16mm 寬）；包裝：托盤 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 128MBIT PAR 54TSOP II

ELPIDA

美光科技

Package：54-TSOP（0.400"，10.16mm 寬）；包裝：托盤 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 128MBIT PAR 54TSOP II

ELPIDA

美光科技

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 頁數(shù)：59 Pages

Micron

鎂光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 頁數(shù)：59 Pages

Micron

鎂光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

文件：1.84431 Mbytes 頁數(shù)：59 Pages

Micron

鎂光