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Package：54-VFBGA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 256MBIT PARALLEL 54VFBGA

ELPIDA

美光科技

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron? 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 頁數(shù)：71 Pages

Micron

鎂光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron? 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 頁數(shù)：71 Pages

Micron

鎂光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron? 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 頁數(shù)：71 Pages

Micron

鎂光

Micron/鎂光
VFBGA-90

Micron/鎂光

上傳：深圳市興燦科技有限公司