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CDA3S03-G

SteeringDiodeArrays-ESDSuppressors

Features ?(16kV)IEC61000-4-2capable ?FastReverseRecoveryTime ?FastTurnonTime ?LowCapacitance ?SMDPackages Applications ?SignalTermination ?SignalConditioning ?ESDSuppression ?TransientSuppression

COMCHIPComchip Technology

典琦典琦科技股份有限公司

DN3S03TTE

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3S03TTE

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3S03TTEB

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3S03TTEB

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

HK3S03B

INTELLIGENTPASSIVETRANSMITTER

MORNSUNGuangzhou Jinshengyang Technology Co., Ltd

金升陽廣州金升陽科技有限公司

MT3S03A

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MT3S03AFS

VHF~UHFBandLow-NoiseAmplifierApplications

VHF~UHFBandLow-NoiseAmplifierApplications VHF~UHFBandOscillator/BufferApplications ?SuperiorperformanceinoscillatorandBufferapplications ?Superiornoisecharacteristics :NF=1.7dB,|S21e|2=5.5dB(f=2GHz)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MT3S03AS

SILICONNPNEPITAXIALPLANARTYPE

VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS ●LowNoise:Figure:NF=1.4dB ●HighGain:Gain=8dB(f=2GHz)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MT3S03AT

VHF~UHFBandLowNoiseAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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