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首頁 >MSRT20080D>規(guī)格書列表

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MSRTA20080D

SiliconStandardRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

PNE20080CPE

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080CPE-Q

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080CPE-QZ

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080CPEZ

200V,2x4Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤4A(perdiode) ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080EPE

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080EPE-Q

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080EPE-QZ

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PNE20080EPEZ

200V,8Ahyperfastrecoveryrectifier

Featuresandbenefits ?Reversevoltage:VR≤200V ?Forwardcurrent:IF≤8A ?Switchingtime:trr≤30ns ?Ptdopedlifetimecontrol ?Lowinductance ?PowerandflatleadSMDplasticpackage ?Packageheighttypical0.95mm ?Highpowercapabilityduetoclip-bondtechnology ?Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTB20080

25Watts,1.6-1.7GHzRFPowerTransistor

Description ThPTB20080isaclassA/AB,NPN,siliconbipolarjunction,internallymatchedRFpowertransistorintendedfor26Vdcoperationfrom1.6to1.7GHz.Itisratedat25WattsminimumoutputpowerforPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmetallization

EricssonEricsson Microelectronics

愛立信愛立信公司

產品屬性

  • 產品編號：

    MSRT20080D

  • 制造商：

    GeneSiC Semiconductor

  • 類別：

    分立半導體產品 > 二極管 - 整流器 - 陣列

  • 包裝：

    散裝

  • 描述：

    DIODE GEN PURP 800V 200A 3 TOWER

供應商型號品牌批號封裝庫存備注價格
GeneSiC
1935+
N/A
55
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
GENESIC
1809+
三塔
96
就找我吧!--邀您體驗愉快問購元件!
 詢價
GeneSiC
22+
NA
55
加我QQ或微信咨詢更多詳細信息,
 詢價
GeneSiC Semiconductor
22+
Three Tower
9000
原廠渠道,現(xiàn)貨配單
 詢價
GeneSiC Semiconductor
23+
Three Tower
9000
原裝正品，支持實單
 詢價
GeneSiC Semiconductor
25+
三塔
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
更多MSRT20080D供應商 更新時間2025-7-22 10:19:00

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