描述 Description

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

特性 Features

The device packages for the encapsulated (THROUGH-HOLE AND SURFACE MOUNT) device types are as follows: (2N2369A and 2N3227) (TO-18), (2N4449) (TO-46), (2N2369A 2N3227, 2N4449) (UB, UBC, and UBCN), (UA version), (U version dual devices).
The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/317.

簡介

MSR2N2369AUBC屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個。由制造生產(chǎn)的MSR2N2369AUBC晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應(yīng)用中用于構(gòu)建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導(dǎo)體器件之一，對于涉及高頻開關(guān)和在大電流或高電壓下工作的應(yīng)用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構(gòu)建模擬信號的應(yīng)用而言，它們?nèi)匀皇鞘走x技術(shù)。