DESCRIPTION

The MSM56V16800D/DH is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

FEATURES

? Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

? 2-bank x 1,048,576-word x 8-bit configuration

? 3.3 V power supply, ±0.3 V tolerance

? Input : LVTTL compatible

? Output : LVTTL compatible

? Refresh : 4096 cycles/64 ms

? Programmable data transfer mode

– CAS latency (1, 2, 3)

– CAS latency (2, 3)*1

– Burst length (1, 2, 4, 8, full page)

– Burst length (1, 2, 4, 8)*1

– Data scramble (sequential, interleave)

*1 : H version only.

? CBR auto-refresh, Self-refresh capability

? Package:

44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800D/DH-xxTS-K)

xx indicates speed rank.