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MSD80N03

N-Channel Enhancement Mode Power MOSFET

BWTECH

Bruckewell Technology LTD

NP80N03CDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03CDE

MOSFIELDEFFECTTRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03CDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03CLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03CLE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03CLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03CLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N03DDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03DDE

MOSFIELDEFFECTTRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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MSTAR
24+
QFNBGA
10000
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MSTAR
1815+
QFP
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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MSTAR/晨星半導(dǎo)體
23+
QFP
50000
全新原裝正品現(xiàn)貨,支持訂貨
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MSTAR/晨星半導(dǎo)體
23+
QFP
10118
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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MSTAR/晨星半導(dǎo)體
24+
NA/
3311
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MSTAR
21+
LQFP156
8000
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu)
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MSTAR
23+
LQFP156
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MSTAR
1610+
LQFP156
800
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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MSTAR
23+
LQFP156
3300
原廠原裝正品
 詢價(jià)
MSTAR/晨星半導(dǎo)體
24+
LQFP156
60000
詢價(jià)
更多MSD80N03供應(yīng)商 更新時(shí)間2025-7-24 18:20:00

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