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首頁>MRFE6VP61K25HR6>規(guī)格書詳情

MRFE6VP61K25HR6中文資料飛思卡爾數(shù)據(jù)手冊PDF規(guī)格書

MRFE6VP61K25HR6
廠商型號

MRFE6VP61K25HR6

功能描述

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

文件大小

932.68 Kbytes

頁面數(shù)量

13

生產(chǎn)廠商

FREESCALE Freescale Semiconductor, Inc

中文名稱

飛思卡爾 飛思卡爾半導體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-7 14:32:00

人工找貨

MRFE6VP61K25HR6價格和庫存,歡迎聯(lián)系客服免費人工找貨

MRFE6VP61K25HR6規(guī)格書詳情

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

? Typical Performance: VDD = 50 Volts, IDQ = 100 mA

特性 Features

? Unmatched Input and Output Allowing Wide Frequency Range Utilization

? Device can be used Single--Ended or in a Push--Pull Configuration

? Qualified Up to a Maximum of 50 VDD Operation

? Characterized from 30 V to 50 V for Extended Power Range

? Suitable for Linear Application with Appropriate Biasing

? Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 20.

產(chǎn)品屬性

  • 型號:

    MRFE6VP61K25HR6

  • 功能描述:

    射頻MOSFET電源晶體管 VHV6 1.25KW ISM NI1230H

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 頻率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 輸出功率:

    100 W

  • 封裝/箱體:

    NI-780-4

  • 封裝:

    Tray

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2019+
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8510
原裝正品代理渠道價格優(yōu)勢
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