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MRF9100

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom921to960MHz,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceampl

MRF9100

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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MRF9100L

900 MHz, 110 W, 26 V, GSM/EDGE Lateral N-Channel RF Power MOSFETs

Overview MRF9100LR3, MRF9100LSR3 removed from active portfolio. View replacement parts via Part Number Search.; \n?On-Die Integrated Input Match\n\n?Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts\n\nOutput Power, P1dB: 110 Watts\n\tPower Gain @ P1dB: 16.5 dB\n\tEfficiency @ P1dB: 53%\n\n?Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts CW Output Power\n\n?Integrated ESD Protection;

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MRF9100R3

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom921to960MHz,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceampl

MRF9100SR3

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom921to960MHz,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceampl

MRF9100LR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9100LSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9100R3

GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET

恩XP