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MRF9085L

880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs; \n?Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA\nIS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\nOutput Power: 20 Watts\n\tPower Gain: 17.9 dB\n\tEfficiency: 28%\n\tAdjacent Channel Power\n\t\t???750 kHz: ?–45.0 dBc @ 30 kHz BW\n\t\t???1.98 MHz: ?–60.0 dBc @ 30 kHz BW\n\n?Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power\n\n?Internally Matched for Ease of Use\n\n?High Gain, High Efficiency and High Linearity\n\n?Integrated ESD Protection\n\n?Designed for Maximum Gain and Insertion Phase Flatness\n\n?Excellent Thermal Stability\n\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n\n?Low Gold Plating Thickness on Leads, 40μ″ Nominal.\n\n?RoHS Compliant\n\n?In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.\n\n;

Overview The MRF9085LR3 and MRF9085LSR3 are designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.\nArchived content is no longer updated and is made available for historical reference only.\n

MRF9085LR3

880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MRF9085LR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9085LR3_06

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9085LSR3

880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MRF9085LSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs