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MRF8S9100HS

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V; ? Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n? Internally Matched for Ease of Use\n? Integrated ESD Protection\n? Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n? RoHS Compliant\n? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.\n;

The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S9100HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF8S9100HSR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs