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MRF858

NPN SILICON RF POWER TRANSISTOR

TheRFLine NPNSiliconRFPowerTransistor Designedfor24VoltUHFlarge–signal,commonemitter,classAlinearamplifierapplicationsinindustrialandcommercialequipmentoperatingintherangeof800–960MHz. ?SpecifiedforVCE=24Vdc,IC=0.5AdcCharacteristics OutputPower=3.

MRF858S

NPN SILICON RF POWER TRANSISTOR

TheRFLine NPNSiliconRFPowerTransistor Designedfor24VoltUHFlarge–signal,commonemitter,classAlinearamplifierapplicationsinindustrialandcommercialequipmentoperatingintherangeof800–960MHz. ?SpecifiedforVCE=24Vdc,IC=0.5AdcCharacteristics OutputPower=3.

MRF858S

800-960 MHz, 3.6 W (CW), 24 V RF Power Transistor, Class A

Overview The MRF858S is designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz.MRF858S removed from active portfolio. Possible Replacement Part: MRF9002R2.; \n?Specified for VCE = 24 Vdc,\nIC = 0.5 Adc Characteristics\n Output Power = 3.6 Watts CW\nMinimum Power Gain = 11 dB\n Minimum ITO = +44.5 dBm\n Typical Noise Figure = 6 dB\n?Characterized with Small–Signal S–Parameters\nand Series Equivalent Large–Signal Parameters\nfrom 800–960 MHz\n?Silicon Nit;

恩XP

MUR858

GLASSPASSIVATEDSUPERFASTRECTIFIER

MUR858

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

MZ858

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.