470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.

? Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM

Output Power — 45 Watts Avg.

Power Gain ≥ 16.7 dB

Drain Efficiency ≥ 21

ACPR ≤ -58 dBc

? Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts, IDQ = 2000 mA

Output Power — 80 Watts Avg.

Power Gain ≥ 16.5 dB

Drain Efficiency ≥ 27.5

IMD ≥ -31.3 dBc

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW Output Power

特性 Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Internally Matched for Ease of Use

? Device Designed for Push-Pull Operation Only

? Integrated ESD Protection

? Excellent Thermal Stability

? Lower Thermal Resistance Package

? Low Gold Plating Thickness on Leads, 40μ″ Nominal.

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.