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MRF374

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF374isDesignedforbroadbandcommercialandindustrialapplicationsin470to860MHzband. FEATURES: ?PG=13.5dBtyp.at100W/875MHz ?ηD=36Typical ?Omnigold?MetalizationSystem

MRF374

RF Power Field-Effect Transistor

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470-860MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,commonsourceamplifierapplicationsin28volttransmitterequipment. ?TypicalTwo-TonePerformance@860MHz

MRF374

470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET; \n?Typical Two–Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture\t\t\tOutput Power — 100 Watts PEP\n\tPower Gain — 13.5 dB\n\tEfficiency — 36%\n\tIMD — ?–31 dBc\n?Typical Performance at 860 MHz, 28 Volts, Broadband Fixture\nOutput Power — 100 Watts PEP\n\tPower Gain — 12 dB\n\tEfficiency — 36%\n\tIMD — ?–34 dBc\n?100% Tested for Load Mismatch Stress at All Phase Angles\n\twith 5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW\n?Excellent Thermal Stability\n?Characterized with Differential Large–Signal Impedance Parameters\n;

Overview \"MRF374\" removed from active portfolio. Possible Replacement Part: \"MRF374A\".The MRF374 is designed for broadband commercial and industrial applications with frequencies from 470 ? 860 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 28 volt transmitter equipment.

恩XP

MRF374

NPN SILICON RF POWER TRANSISTOR;

ETC

MRF374

Trans RF MOSFET N-CH 65V 7A 5-Pin Case 375F-04;

MRF374A

RF POWER FIELD EFFECT TRANSISTOR

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,commonsourceamplifierapplicationsin28/32volttransmitterequipment. ?TypicalTwo–TonePerformance@860

MRF374A

RF Power Field Effect Transistors

MRF374A_06

RF Power Field Effect Transistors