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MRF373

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesfrom470–860MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonso

MRF373

RF MOSFET;

MRF373A

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-sig

MRF373A

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,commonsourceam

MRF373ALR1

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-sig

MRF373ALR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,commonsourceam

MRF373ALR1_08

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,commonsourceam

MRF373ALSR1

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-sig

MRF373ALSR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom470to860MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,commonsourceam

MRF373ALSR1

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET; \n?Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture\nOutput Power: 75 Watts\nPower Gain: 18.2 dB\nEfficiency: 60%\n\n?Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Output Power\n\n?Integrated ESD Protection\n\n?Excellent Thermal Stability\n\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n\n?Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.\n\n?RoHS Compliant\n\n?In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.\n\n;

Overview The MRF373ALSR1 is designed for broadband commercialand industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment.Archived content is no longer updated and is made available for historical reference only.\n

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