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MRF275

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

TheRFMOSFETLine PowerField-EffectTransistorN–ChannelEnhancement–Mode Designedprimarilyforwidebandlarge–signaloutputanddriverstagesfrom100–500MHz. ?GuaranteedPerformance@500MHz,28Vdc OutputPower—150Watts PowerGain—10dB(Min) Efficiency—

MRF275

N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET

MRF275

N-CHANNEL BROADBAND RF POWER FET

MRF275

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

恩XP

MRF275G

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line\nPower Field-Effect Transistor N–Channel Enhancement–ModeDesigned primarily for wideband large–signal output and driver stages from 100 – 500 MHz.\n? Guaranteed Performance @ 500 MHz, 28 Vdc\n? Output Power — 150 Watts\n? Power Gain — 10 dB (Min)\n? Efficiency — 50% (Min)\n? 1;

恩XP

MRF275G

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

TheRFMOSFETLine PowerField-EffectTransistorN–ChannelEnhancement–Mode Designedprimarilyforwidebandlarge–signaloutputanddriverstagesfrom100–500MHz. ?GuaranteedPerformance@500MHz,28Vdc OutputPower—150Watts PowerGain—10dB(Min) Efficiency—

MRF275L

TMOS

Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.; ·N-Channel Enhancement Mode Device\n·Low Thermal Resistance\n·100% Ruggedness Tested at Rated Output Power\n·Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)\n·Low Crss — 17 pF typ. @ VDS = 28 V\n;

MRF275G

N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET

MRF275G

The RF MOSFET Line 150W, 500MHz, 28V

MRF275G

The RF MOSFET Line 150W, 500MHz, 28V