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MRF184S

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakesthemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformance@945MHz,28Volts

MRF184SR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformance@945MHz,28Volt

MRF184SR1

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF184SR1\" removed from active portfolio. Possible Replacement Part: \"MRF9060MR1\" or \"MRF9060LSR1\".The MRF184SR1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large; \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power = 60 Watts\n\tPower Gain = 11.5 dB\n\tEfficiency = 53%\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?100% Tested for Loa;

恩XP

MSK184

DUALHIGHVOLTAGE/HIGHCURRENTOPERATIONALAMPLIFIER

DESCRIPTION: TheMSK182,183,184and185aredualhighpowermonolithicoperationalamplifiersidealforusewithawidevarietyofloads.Withoperationfromeithersingleordualsupplies,theyofferexcellentdesignflexibility.Powerdissipationiskepttoaminimumwithaquiescentcurrent

MSK184

DUALHIGHVOLTAGE

MSK184G

DUALHIGHVOLTAGE/HIGHCURRENTOPERATIONALAMPLIFIER

DESCRIPTION: TheMSK182,183,184and185aredualhighpowermonolithicoperationalamplifiersidealforusewithawidevarietyofloads.Withoperationfromeithersingleordualsupplies,theyofferexcellentdesignflexibility.Powerdissipationiskepttoaminimumwithaquiescentcurrent