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MRF183

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakesithemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformanceat945MHz,28Vol

MRF183LSR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformanceat945MHz,28Vol

MRF183R1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformanceat945MHz,28Vol

MRF183R1

1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF183R1\" removed from active portfolio. Possible Replacement Part: \"MRF9045LR1\".The MRF183R1 is designed for broadband commercialand industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common sour; \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power — 45 Watts PEP\n\tPower Gain — 11.5 dB\n\tEfficiency — 33%\n\tIMD — ??28 dBc\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?1;

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MRF183S

45 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment.? Guaranteed Performance at 945 MHz, 28 Volts\n;

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MRF183S

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakesithemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformanceat945MHz,28Vol

MRF183SR1

1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF183SR1\"removed from active portfolio. Possible Replacement Part: \"MRF9045MR1\" or \"MRF9045LSR1\".The MRF183SR1 is designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device makes them ideal for la; \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power — 45 Watts PEP\n\tPower Gain — 11.5 dB\n\tEfficiency — 33%\n\tIMD — ??28 dBc\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?1;

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