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MRF15090

RF POWER TRANSISTOR

TheRFLine NPNSiliconRFPowerTransistor Designedfor26voltsmicrowavelarge–signal,commonemitter,classAandclassABlinearamplifierapplicationsinindustrialandcommercialFM/AMequipmentoperatingintherange1400–1600MHz. ?Specified26Volts,1490MHz,ClassABCha

MRF15090

1.5 GHz, 90 W, 26 V RF Power Transistor; \n?Specified 26 Volts, 1490 MHz, Class AB Characteristics\n Output Power — 90 Watts (PEP)\n Gain — 7.5 dB Min @ 90 Watts (PEP)\n Collector Efficiency — 30% Min @ 90 Watts (PEP)\n Intermodulation Distortion — ??–28 dBc Max @ 90 Watts (PEP)\n?Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 5 Adc\n?Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz\n?Characterized with Small–Signal S–Parameters from 1000–2000 MHz\n?Silicon Nitride Passivated\n?100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power\n?Gold Metallized, Emitter Ballasted for Long Life\nand Resistance to Metal Migration\n;

Overview The MRF15090 Silicon RF PowerTransistor is designed for 26 volts microwavelarge–signal, common emitter, class A andclass AB linear amplifier applications inindustrial and commercial FM/AM equipment operatingin the range 1400–1600 MHz.MRF15090 removed from active portfolio. Possible Replacement Part: None.

恩XP

RHRU15090

150A,900V-1000VHyperfastDiodes

150A,900V-1000VHyperfastDiodes RHRU15090andRHRU150100(TA49072)arehyperfastdiodeswithsoftrecoverycharacteristics(tRR

RURU15090

150A,700V-1000VUltrafastDiodes

Description RURU15070,RURU15080andRURU15090andRURU150100areultrafastdiodeswithsoftrecoverycharacteristics(tRR Features ?UltrafastwithSoftRecovery.....................

MRF1518NT1

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PLD-1.5