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MR2920中文資料SHINDENGEN數(shù)據(jù)手冊PDF規(guī)格書

MR2920
廠商型號

MR2920

功能描述

Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT

文件大小

183.74 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商

SHINDENGEN

中文名稱

日本新電元工業(yè)株式會社

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-23 23:01:00

人工找貨

MR2920價格和庫存,歡迎聯(lián)系客服免費人工找貨

MR2920規(guī)格書詳情

Introduction

Development of the MR2000 Series

Energy conservation guidelines from the Ministry of Economy, Trade and Industry require a reduction in the standby power consumption of various types of electrical products as a means of reducing environmental CO2 levels. There are strong demands for reduced power consumption in common devices such as TVs and set top boxes (STB) which remain on standby for long periods of time, and efficient operation under micro-loads is required. Furthermore, demands for integration of the various protective functions, higher functionality, and lower price are increasing to the extent that it is now difficult to satisfy such demands with existing products.

Primary Features

1. Current consumption is reduced with use of the burst mode, promoting standby compatibility with a single converter.

2. The optimized switching device provides ideal partial resonance operation for high efficiency and low noise.

3. The 900V resistant switching device (high-speed IGBT) simplifies design of power supplies for worldwide input.

4. Power consumption under micro-load is extremely low (burst mode).

5. Use of a drain kick circuit eliminates the need for a start-up resistor.

6. The use of a soft drive circuit reduces noise.

7. Incorporates an over-current protection function (primary current detect, Ton limit).

8. Incorporates over-voltage protection and thermal shutdown functions.

9. A power supply circuit may be configured with the minimum of external components.

10. The use of the fully molded package is beneficial for insulation design.

產(chǎn)品屬性

  • 型號:

    MR2920

  • 功能描述:

    IGBT 晶體管 Power IC

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

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