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NCS213R

Current-ShuntMonitors,VoltageOutput,BidirectionalZero-Drift,Low-orHigh-SideCurrentSensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCS213R

Current-ShuntMonitors,VoltageOutput,Bidirectional,Zero-Drift,Low-orHigh-SideCurrentSensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCS213RMUTAG

Low-orHigh-SideCurrentSensing

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCS213RMUTAG

Current-ShuntMonitors,VoltageOutput,BidirectionalZero-Drift,Low-orHigh-SideCurrentSensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCS213RMUTAG

Current-ShuntMonitors,VoltageOutput,Bidirectional,Zero-Drift,Low-orHigh-SideCurrentSensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV213R

Current-ShuntMonitors,VoltageOutput,BidirectionalZero-Drift,Low-orHigh-SideCurrentSensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV213R

Current-ShuntMonitors,VoltageOutput,Bidirectional,Zero-Drift,Low-orHigh-SideCurrentSensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE213

Presetcounterselectronic

IVOBaomeng Electronics (Shanghai) Co., Ltd

堡盟電子堡盟電子（上海）有限公司

NTE213

GermaniumPNPTransistorHighPower,HighGainAmplifier

Description: TheNTE213isagermaniumPNPpowertransistorinaTO36typepackagedesignedhigh–power,high–gainapplicationsinhigh–reliabilityindustrialequipment.

NTE

NTE Electronics

OD-S-213

OutlineDrawing

MA-COM

M/A-COM Technology Solutions, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    MOCD213VM

  • 功能描述：

    晶體管輸出光電耦合器 8-Pin Optocoupler 2Ch Phototransistor

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 輸入類(lèi)型：

    DC

  • 最大集電極/發(fā)射極電壓：

    70 V

  • 最大集電極/發(fā)射極飽和電壓：

    0.4 V

  • 絕緣電壓：

    5300 Vrms

  • 電流傳遞比：

    100 % to 200 %

  • 最大正向二極管電壓：

    1.65 V

  • 最大輸入二極管電流：

    60 mA

  • 最大集電極電流：

    100 mA

  • 最大功率耗散：

    100 mW

  • 最大工作溫度：

    + 110 C

  • 最小工作溫度：

    - 55 C

  • 封裝/箱體：

    DIP-4

  • 封裝：

    Bulk

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350
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0N
24+
SOP8
60000
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2410+
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3688
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更多MOCD213VM供應(yīng)商 更新時(shí)間2025-7-27 11:00:00

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