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MMRF5017HS

30-2200 MHz, 125 W CW, 50 V RF Power GaN Transistor; ? Advanced GaN on SiC, offering high power density\n? Decade bandwidth performance\n? Input matched for extended wideband performance\n? High ruggedness: > 10:1 VSWR\n? RoHS compliant\nTypical Applications? Ideal for military end-use applications, including the following: ? Narrowband and multi-octave wideband amplifiers\n ? Radar\n ? Jammers\n ? EMC testing\n? Also suitable for commercial applications, including the following: ? Public mobile radios, including emergency service radios\n? Industrial, scientific and medical\n? Wideband laboratory amplifiers\n? Wireless cellular infrastructure\n;

The MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications.\nThis part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.\n

恩XP

MMRF5017HS

RF Power GaN Transistor

ETC

MP5017

3V-.5.5V,1A??5ACurrentLimitSwitchwithOver-VoltageClampandReverseBlockingin2mmx3mmQFNPackage

MP5017GD

3V-.5.5V,1A??5ACurrentLimitSwitchwithOver-VoltageClampandReverseBlockingin2mmx3mmQFNPackage

MTL5017

CompactmodulardesignwithDINrailmounting

NTE5017A

ZenerDiode,1/2Watt?5Tolerance

Features: ●ZenerVoltage2.4to200V ●DO35Package

OV5017

Singlechip1/4videoimagesensor

PEWAD5017

WR-112WaveguideBulkheadAdapterCPR-112GFlange,7.05GHzto10GHz

PS5017

SMDPowerInductorsUnshielded

GeneralSpecification a.-Temp.rise:40oCtyp. b.-Storagetemp.:-40oC~+125oC c.-Operatingtemp.:-40oC~+125oC(Temp.riseincluded) d.-Resistancetosolderheat:260oC.10secs

S5017

ISDNS-INTERFACETRANSFORMER