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MMRF5014H

1-2700 MHz, 125 W連續(xù)波，50 V寬帶射頻功率GaN on SiC晶體管; ? Decade bandwidth performance\n? Low thermal resistance\n? Advanced GaN on SiC, offering high power density\n? Input matched for extended wideband performance\n? High ruggedness: > 20:1 VSWR\n? RoHS compliant\n? These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.\nApplications? Ideal for military end-use applications, including the following:? Narrowband and multi-octave wideband amplifiers\n? Radar\n? Jammers\n? EMC testing\n? Also suitable for commercial applications, including the following:? Public mobile radios, including emergency service radios\n? Industrial, scientific and medical\n? Wideband laboratory amplifiers\n? Wireless cellular infrastructure\n;

The MMRF5014H 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.\nThis part is characterized and performance is guaranteed for applications operating in the 1-2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.\n

恩XP

MMRF5014H

RF Power GaN Transistor

ETC

MP5014A

12V,5A,ProgrammableCurrent-LimitSwitchwithOver-VolatgeClampandSlew-RateControlinTSOT23-8

MP5014AGJ

12V,5A,ProgrammableCurrent-LimitSwitchwithOver-VolatgeClampandSlew-RateControlinTSOT23-8

MT5014

GlassPassivatedThreePhaseBridgeRectifiers

MT5014A

50AmpThreePhaseBridgeRectifier400to1600Volts

MT5014A

BridgeRectifier

MT5014A

GlassPassivatedThreePhaseBridgeRectifiers

MT5014A

ThreePhaseBridgeRectifiers

Features ULrecognition,file#￡230084 Glasspassivatedchip Highsurgecurrentcapability Lowthermalresistance Solderdip275°Cmax.7s,perJESD22-B106

MT5014W

GlassPassivatedThreePhaseBridgeRectifiers