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MMFT1N10E

MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET?SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to–

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RFL1N10

N-Channel,PowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFL1N10

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFL1N10

1A,80Vand100V,1.200Ohm,N-Channel,PowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

Intersil

Intersil Corporation

RFL1N10L

1A,100V,1.200Ohm,LogicLevel,N-ChannelPowerMOSFET

Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistorspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthrougha

Intersil

Intersil Corporation

RJ1N10BBH

Nch80V235APowerMOSFET

Features 1)Lowon-resistance 2)Highpowermoldpackage (TO263AB) 3)Pb-freeplating;RoHScompliant 4)HalogenFree 5)100%RgandUIStested Application Switching Motordrives DC/DCconverter

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    MMFT1N10E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    MEDIUM POWER TMOS FET 1 AMP 100 VOLTS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON/安森美
24+
SOT-223
5000
只做原廠渠道 可追溯貨源
 詢價(jià)
ON
24+
SOT223
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價(jià)
ON
23+
SOT-223
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
ON
23+
SOT-223
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
ON/安森美
23+
SOT-223
24190
原裝正品代理渠道價(jià)格優(yōu)勢
 詢價(jià)
ON
08+
SOT-223
5000
普通
 詢價(jià)
ON/安森美
21+
SOT-223
30000
優(yōu)勢供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
 詢價(jià)
ON/安森美
2022+
SOT-223
2000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
ON
18+
SOT-223
2000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ON
23+
SOT-223
2000
正規(guī)渠道,只有原裝!
 詢價(jià)
更多MMFT1N10E供應(yīng)商 更新時(shí)間2025-7-26 16:36:00

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