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MMDF2N06V

DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

TMOSVSO-8forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Justasw

MMDF2N06V

DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS;

MMDF2N06VL

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM;

TMOS V? SO-8 for Surface Mount N-Channel Enhancement-mode Silicon GateTMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.New Features of TMOS V\n? On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology\n? Faster Switching than E–FET PredecessorsFeatures Common to TMOS V and TMOS E–FETS\n? Avalanche Energy Specified\n? IDSS and VDS(on) Specified at Elevated Temperature\n? Static Parameters are the Same for both TMOS V and TMOS E–FET\n? Miniature SO–8 Surface Mount Package – Saves Board Space\n? Mounting Information for SO–8 Package Provided

MMDF2N06VL

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

TMOSV?SO-8forSurfaceMountN-ChannelEnhancement-modeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Just

MTDF2N06HD

N??hannelPowerMOSFET

RFL2N06

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

RFL2N06L

2A,60V,0.950Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFL2N06LN-channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.T

RFW2N06RLE

2A,60V,0.160Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFW2N06RLEN-Channel,logiclevel,ESDprotected,powerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.TheRFW2N06RLEwasdesigned

STN2N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21? ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER