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MJE702

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE702

NPN (HIGH DC CURRENT GAIN)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MJE702

Plastic Darlington Complementary Silicon Power Transistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE702

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE702

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE702

Monolithic Construction With Built-in Base- Emitter Resistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors ?HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC ?ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE702

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE702

NPN (HIGH DC CURRENT GAIN)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MJE702

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE702

Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-225 Bulk

NJS

New Jersey Semiconductor

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Polarity：

    PNP

  • IC Continuous (A)：

    4

  • V(BR)CEO Min (V)：

    80

  • VCE(sat) Max (V)：

    2.5

  • hFE Min (k)：

    0.75

  • Package Type：

    TO-225-3

供應(yīng)商型號品牌批號封裝庫存備注價格
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新現(xiàn)貨MJE702即刻詢購立享優(yōu)惠#長期有排單訂
 詢價
ON
24+
TO-225
8866
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
ON/ST
1738+
TO-126
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
ON
23+
TO-126
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
24+
TO-126
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
ON/安森美
23+
TO-225AATO-126
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
ON/安森美
21+
TO-225AATO-126
30000
優(yōu)勢供應(yīng) 實單必成 可13點增值稅
 詢價
ON/安森美
23+
TO-126
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
22+
TO-126
6000
十年配單,只做原裝
 詢價
更多MJE702供應(yīng)商 更新時間2025-7-31 16:22:00

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