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MJD31C

SILICON POWER TRANSISTORS

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves ?StraightLeadVersioninPlasticSleeves(“1”Suffix) ?LeadFormedVersi

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD31C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD31C

General Purpose Amplifier Low Speed Switching Applications

NPNEpitaxialSiliconTransistor Features ?GeneralPurposeAmplifier ?LowSpeedSwitchingApplications ?LoadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularTIP31andTIP31C

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJD31C

NPN SURFACE MOUNT TRANSISTOR

Features ?BVCEO>100V ?IC=3AhighContinuousCollectorCurrent ?ICM=5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?ComplementaryPNPType:MJD32C ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”

DIODESDiodes Incorporated

美臺半導體

MJD31C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

MJD31C

Marking：D-PAK；Package：TO-252；TRANSISTOR (NPN)

FEATURES ●DesignedforGeneralPurposeAmplifierand LowSpeedSwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electri

FS

First Silicon Co., Ltd

MJD31C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves ?StraightLeadVersioninPlasticSleeves(“1”Suffix) ?LeadFormedVersi

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD31C

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES ?Designedforgeneral ?ExcellentDCCurrentGainCharacteristics

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MJD31C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

MJD31C

Silicon NPN epitaxial planer Transistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?ElectricallySimilartoPopularTIP31andTIP32

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MJD31C

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    散裝

  • 晶體管類型：

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    1.2V @ 375mA，3A

  • 電流 - 集電極截止（最大值）：

    50μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    10 @ 3A，4V

  • 工作溫度：

    150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-252-3，DPak（2 引線 + 接片），SC-63

  • 供應商器件封裝：

    DPAK

  • 描述：

    TRANS NPN 100V 3A DPAK

供應商型號品牌批號封裝庫存備注價格
NK/南科功率
2025
TO-252
3200
國產(chǎn)南科
 詢價
CJ/長電
25+
TO-252
32360
CJ/長電全新特價MJD31C即刻詢購立享優(yōu)惠#長期有貨
 詢價
DIODES
SOT-252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
ON
23+
DPAK
56000
詢價
CJ/長電
24+
TO-252
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
ON/安森美
24+
DPAK
20000
只做原廠渠道 可追溯貨源
 詢價
ON
24+
TO-252
15300
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
ON
24+
DPAK-3
14950
詢價
CJ/長電
2021+
TO-252
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
ST/意法
24+
TO-252
504580
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
更多MJD31C供應商 更新時間2025-7-24 10:01:00

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