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MJD112

Silicon NPN Power Transistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD112

Silicon NPN Power Transistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD112

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD112

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP112. Applications Mediumpowerswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

MJD112

TRANSISTOR (NPN)

FEATURES ?ComplementaryDarlingtonPowerTransistors DpakforSurfaceMountApplications

FS

First Silicon Co., Ltd

MJD112

Complementary Darlington Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD112

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TGS

Tiger Electronic Co.,Ltd

MJD112

Silicon NPN epitaxial planer Transistors

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MJD112

TRANSISTOR (NPN)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD112

isc Silicon NPN Darlington Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號：

    MJD112

  • 功能描述：

    達林頓晶體管 2A 100V Bipolar

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 配置：

    Octal

  • 晶體管極性：

    NPN 集電極—發(fā)射極最大電壓

  • VCEO：

    50 V 發(fā)射極 - 基極電壓

  • VEBO：

    集電極—基極電壓

  • 最大直流電集電極電流：

    0.5 A

  • 最大工作溫度：

    + 150 C

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-18

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
CJ/長電
25+
TO-251-3L
20300
CJ/長電原裝特價MJD112即刻詢購立享優(yōu)惠#長期有貨
 詢價
ON
24+
TO-252-2
85600
全新原裝現貨/假一罰百!
 詢價
長電
23+
TO-252
750000
一級分銷商
 詢價
CJ
23+
TO-252
7050
原廠原裝正品
 詢價
CJ/長電
2021+
TO-252
9000
原裝現貨,隨時歡迎詢價
 詢價
ST/意法
24+
TO-252
504585
免費送樣原盒原包現貨一手渠道聯系
 詢價
ON
23+
TO252
12335
詢價
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
24+
SOT252
1000
詢價
MOT
05+
原廠原裝
2940
只做全新原裝真實現貨供應
 詢價
更多MJD112供應商 更新時間2025-7-21 18:34:00

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