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MJD148

NPNSiliconPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD148

NPNSILICONPLASTICPOWERTRANSISTORS

NPNSILICONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications

CDIL

Continental Device India Limited

MJD148

45V,4ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Electricallysimilartopopul

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

MJD148

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=45V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.5V(Max)@IC=2A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJD148-Q

45V,4ANPNhighpowerbipolartransistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

MJD148-QJ

45V,4ANPNhighpowerbipolartransistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

MRF148

N-CHANNELMOSLINEARRFPOWERFET

MACOMTyco Electronics

瑪科姆技術(shù)方案控股有限公司

MRF148

N-CHANNELMOSLINEARRFPOWERFET

TheRFMOSFETLineRFPowerField-EffectTransistorN-ChannelEnhancement-Mode Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorHighOrderIMD ?Specified50Volts,30MHzCharacteristics OutputPower=30Watts Pow

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF148

RFPowerField-EffectTransistor

TheRFMOSFETLineRFPowerField-EffectTransistorN-ChannelEnhancement-Mode Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorHighOrderIMD ?Specified50Volts,30MHzCharacteristics OutputPower=30Watts Power

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MRF148A

LinearRFPowerFET30W,to175MHz,50V

Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorhighorderIMD IMD(d3)(30WPEP):–35dB(Typ.) IMD(d11)(30WPEP):–60dB(Typ.) ?Specified50V,30MHzcharacteristics: Outputpower:30W Gain:18dB(Typ.)

MA-COM

M/A-COM Technology Solutions, Inc.

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MINMAX
2018+
DC-DC
6528
科恒偉業(yè)!承若只做進(jìn)口原裝正品假一賠十!1581728776
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MINMAX
2021+
DIP
11000
十年專營(yíng)原裝現(xiàn)貨,假一賠十
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MINMAX
23+
SIPDIP
13000
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更多MIH-SS-148LF供應(yīng)商 更新時(shí)間2025-7-22 17:55:00

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