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MGY20N120D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
MGY20N120D |
| 功能描述 | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 文件大小 |
171.79 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | ONSEMI |
| 中文名稱 | 安森美半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-31 22:58:00 |
| 人工找貨 | MGY20N120D價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MGY20N120D規(guī)格書詳情
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
? Industry Standard High Power TO–264 Package (TO–3PBL)
? High Speed Eoff: 160 J per Amp typical at 125°C
? High Short Circuit Capability – 10 s minimum
? Soft Recovery Free Wheeling Diode is included in the package
? Robust High Voltage Termination
? Robust RBSOA
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
麥科 |
2016+ |
SMD |
50000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
麥科 |
25+23+ |
0402 |
56659 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
24+ |
N/A |
1640 |
詢價(jià) | ||||
TDK/東電化 |
2022+ |
0603 |
4000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
風(fēng)華 |
25+ |
DIP |
15000 |
國產(chǎn)替換現(xiàn)貨降本 |
詢價(jià) | ||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
ON/安森美 |
23+ |
NA |
12095 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道 |
詢價(jià) | ||
普德新星 |
23+ |
MODULE |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
69000 |
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
麥科 |
24+ |
0402 |
50000 |
全新原裝數(shù)量均有多電話咨詢 |
詢價(jià) |
